Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
OP500, OP501
Relative On-State Collector Current
vs. Irradiance—Ee (mW/cm
2
)
160%
140%
Normalized at E
e
= 5mW/cm
2
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25 °C
Relative On-State Collector Current-IC (mA)
vs. Temperature-T
A
140%
130%
Normalized at T
A
= 25°C .
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25 °C
Relative Collector Current
120%
100%
80%
60%
40%
20%
Relative Collector Current
5.0
6.0
7.0
8.0
120%
110%
100%
90%
80%
70%
0
1.0
2.0
3.0
4.0
-25
0
25
50
75
100
Ee—Irradiance (mW/cm
2
)
Temperature—(°C)
OP500DA, OP501DA
Collector-Emitter Dark Current
vs. Temperature-T
A
1000
Relative On-State Collector Current –
Ic (mA)
vs. Collector-Emitter Voltage—V
CE
(V)
30
1.2 mW/cm
2
I
C(ON)
- On-State Collector Current (mA)
Conditions: E
e
= 0 mW/cm
2
V
CE
= 10V
Collector-Emitter Dark Current (nA)
25
20
1.0 mW/cm
2
100
0.8 mW/cm
2
17.5
0.6 mW/cm
2
10
15.0
0.4 mW/cm
2
1
12.5
10.0
0.2 mW/cm
2
0
-25
0
25
50
75
100
0
0.5
1.0
1.5
2.5
3
Temperature—(°C)
Collector-Emitter Voltage (V)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A.4
02/09
Page 4 of 5
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
OPTEK [ OPTEK TECHNOLOGIES ]
