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OP251 参数 Datasheet PDF下载

OP251图片预览
型号: OP251
PDF下载: 下载PDF文件 查看货源
内容描述: 红外发光二极管在微型SMD封装 [Infrared Light Emitting Diode in Miniature SMD Package]
分类和应用: 光电二极管
文件页数/大小: 3 页 / 269 K
品牌: OPTEK [ OPTEK TECHNOLOGIES ]
 浏览型号OP251的Datasheet PDF文件第1页浏览型号OP251的Datasheet PDF文件第3页  
SMD Infrared LED
OP251
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Reverse Voltage
Continuous Forward Current
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
-40° C to +85° C
-25° C to +85° C
260° C
(1)
30 V
50 mA
130 mW
(2)
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
SYMBOL
E
e(APT)
V
F
I
R
λ
P
Θ
HP
t
r
, t
f
3.
PARAMETER
Apertured Radiant Incidence
Forward Voltage
Reverse Current
Peak Emission Wavelength
Emission Angle at Half Power Points
Rise and Fall Time
MIN
0.3
TYP
MAX
UNITS
mW/cm
2
I
F
= 20mA
(3)
I
F
= 20mA
V
R
= 2.0V
I
F
= 10mA
I
F
= 20mA
CONDITIONS
1.5
100
890
105
500
V
µA
nm
Deg.
ns
I
F(PEAK)
= 100mA, PW = 10µs, 10% D.C.
E
e(APT)
is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and cen-
tered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. E
e(APT)
is not necessarily uniform within
the measured area.
Relative Radiant Intensity vs.
Forward Current vs. Temperature
350%
300%
Normalized at I
F
= 20mA,
T
A
= 20°C. Temperatures
stepped in 20°C Increments
Forward Voltage vs. Forward
Current vs. Temperature
1.5
Temperatures stepped
in 20
°C
Increments
-40°C
-40°C
Relative Radiant Intensity
1.4
Forward Voltage (V)
250%
200%
150%
100%
50%
100°C
1.3
100°C
1.2
1.1
0
10
20
30
40
50
1.0
0
10
20
30
40
50
Forward Current (mA)
OPTEK Technology Inc.—
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Forward Current (mA)
Issue 1.1 07.05
Page 2 of 3