Types HCC240, HCC242, TX, TXV, ESA-XN
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
Input Diode
V
F
PARAMETER
MIN TYP MAX UNITS
0.80
1.00
0.70
1.5
1.7
1.3
100
30
5.0
100
100
V
V
V
µA
V
V
nA
µA
mA
6.0
mA
mA
mA
mA
15.0
mA
mA
mA
0.30
0.30
10
11
5.0
15.0
20.0
15.0
20.0
V
V
Ω
pF
µs
µs
µs
µs
TEST CONDITIONS
I
F
= 10.0 mA
I
F
= 10.0 mA, T
A
= -55
o
C
I
F
= 10.0 mA, T
A
= 100
o
C
V
R
= 2.0 V
I
C
= 1.0 mA, I
F
= 0
I
E
= 100
µA,
I
F
= 0
V
CE
= 20 V, I
F
= 0
V
CE
= 20 V, I
F
= 0, T
A
= 100
o
C
V
CE
= 5.0 V, I
F
= 2.0 mA
V
CE
= 5.0 V, I
F
= 10.0 mA
V
CE
= 5.0 V, I
F
= 10.0 mA, T
A
= -55
o
C
V
CE
= 5.0 V, I
F
= 10.0 mA, T
A
= 100
o
C
V
CE
= 5.0 V, I
F
= 2.0 mA
V
CE
= 5.0 V, I
F
= 10.0 mA
V
CE
= 5.0 V, I
F
= 10.0 mA, T
A
= -55
o
C
V
CE
= 5.0 V, I
F
= 10.0 mA, T
A
= 100
o
C
I
C
= 2.5 mA, I
F
= 20.0 mA
I
C
= 10.0 mA, I
F
= 20.0 mA
V
I-O
= ±1000 VDC
(1)
V
I-O
= 0.0 V, f = 1.0 MHz
(1)
V
CC
= 10.0 V, I
F
= 10.0 mA, R
L
= 100
Ω
Forward Voltage
I
R
V
(BR)CEO
V
(BR)ECO
I
C(OFF)
Reverse Current
Collector-Emitter Breakdown Voltage
(3)
Emitter-Collector Breakdown Voltage
(4)
Collector-Emitter Dark Current
Output Phototransistor
Coupled
On-State Collector Current
HCC240
0.15
2.5
1.0
1.0
I
C(ON)
HCC242
0.40
10.0
4.0
4.0
V
CE(SAT)
R
I-O
C
I-O
t
r
Collector-Emitter Saturation Voltage
HCC240
HCC242
Resistance (Input to Output)
Capacitance (Input to Output)
Output Rise Time
HCC240
HCC242
t
f
Output Fall Time
HCC240
HCC242
V
CC
= 10.0 V, I
F
= 10.0 mA, R
L
= 100
Ω
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
15-29
OPTEK [ OPTEK TECHNOLOGIES ]
