HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8
µm
band GaAlAs laser diode with a TQW (triple quantum well) structure. Its
internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
source for optical disk memories, card readers and various other types of optical equipment.
ODE-208-048A (Z)
Rev.1
May 08, 2007
Features
•
Infrared light output:
λp
= 820 to 840 nm
•
High power: standard continuous operation at
40 mW (CW), pulsed operation at 50 mW
•
Built-in monitor photodiode
•
Single longitudinal mode
Package Type
•
HL8325G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 1
µs,
duty = 50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Asitgmatism
Lasing wavelength
Monitor current
Symbol
Ith
ηs
θ//
θ⊥
A
S
λp
I
S
Min
—
0.4
7
18
—
820
20
Typ
40
0.5
10
22
5
830
40
Max
70
0.9
14
32
—
840
130
Unit
mA
mW/mA
°
°
µm
nm
µA
Test Conditions
—
24 (mW) / (I
(32mW)
– I
(8mW)
)
P
O
= 40 mW, FWHM
P
O
= 40 mW, FWHM
P
O
= 4 mW, NA = 0.4
P
O
= 40 mW
P
O
= 4 mW, V
R(PD)
= 5 V
Rev.1 May 08, 2007 page 1 of 4
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