HL6556MG
AlGaInP Laser Diodes
ODE-208-041 (Z)
Preliminary
Rev.0
Feb. 06, 2007
Description
The HL6556MG is a 0.65
µm
band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
Features
•
•
•
•
•
•
Visible light output
:
λp
=658 nm Typ
Single longitudinal mode
Optical output power : 10 mW CW
Low operating voltage : 2.8 V Max
Built-in photodiode for monitoring laser output
Small package
:
φ
5.6 mm
Package Type
•
HL6556: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
12
2
30
–10 to +70
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
A
S
λp
I
S
Min
30
—
—
7
18
—
645
0.03
Typ
45
60
—
8.5
22
6
658
0.07
Max
70
90
2.8
10.5
26
—
665
0.15
Unit
mA
mA
V
°
°
—
nm
mA
Test Conditions
—
P
O
= 10 mW
P
O
= 10 mW
P
O
= 10 mW
P
O
= 10 mW
P
O
= 5 mW, NA = 0.55
P
O
= 10 mW
P
O
= 10 mW, V
R(PD)
= 5 V
Rev.0 Feb. 06, 2007 page 1 of 3
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