HL6340MG/41MG
The Cautions on the Handing of HL6340MG/41MG
As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by
power consumption alone, but optical output must be considered from view point of optical damage. These
products are more sensitive to static electricity or an surge current than the conventional product. The
following is test data of ESD (electric static damage). The operating condition should be within 5 mW and
the working please should be keep small static electricity level such as 20 V less and small surge current
such as 40 mA less from out.
1. Electrostatic destructive examination data
: HL6340MG
: HL6312G
100
Survival rate (%)
Survival rate (%)
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0
Applied voltage V
CC
(kV)
N=5
R = 1.5kΩ
C = 100pF
Reverse
80
60
40
20
0
0
200
400
600
800
Applied voltage V
CC
(V)
N=5
R = 1.5kΩ
C = 100pF
Forward
100
Survival rate (%)
100
Survival rate (%)
80
60
40 N = 5
R=0
20 C = 200pF
Forward
0
0 20 40 60 80 100 120
Applied voltage V
CC
(V)
80
60
40
20
0
0
N=5
R=0
C = 200pF
Reverse
0.5 1.0 1.5 2.0 2.5 3.0
Applied voltage V
CC
(kV)
R
V
CC
C
DUT
Step stress test (5 times/voltage)
Failure criteria
∆I
OP
≥
10%
Rev.4, Mar. 2005, page 7 of 9
OPNEXT [ OPNEXT. INC. ]
