HL6312G/13G
AlGaInP Laser Diodes
Description
The HL6312G/13G are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength
is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
of optical equipment. Hermetic sealing of the package achieves high reliability.
ODE-208-017 (Z)
Rev.0
Jul. 01, 2005
Features
•
•
•
•
•
•
Visible light output:
λp
= 635 nm Typ
Single longitudinal mode
Optical output power: 5 mW CW
Low Operating voltage: 2.7 V Max
Built-in photodiode for monitoring laser output
TM mode oscillation
Package Type
•
HL6312G/13G: LD/G2
Internal Circuit
•
HL6312G
1
3
Internal Circuit
•
HL6313G
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width
≤
1
µs
, duty
≤
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
A
S
λp
I
S
Min
20
—
—
5
25
—
625
0.2
Typ
45
55
—
8
31
8
635
0.4
Max
70
85
2.7
11
37
—
640
0.8
Unit
mA
mA
V
°
°
µm
nm
mA
Test Conditions
—
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, NA = 0.55
P
O
= 5 mW
P
O
= 5 mW, V
R(PD)
= 5 V
Rev.0 Jul. 01, 2005 page 1 of 4
OPNEXT [ OPNEXT. INC. ]
