HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
ODE-208-050 (Z)
Rev.0
Oct. 30, 2006
Features
•
•
•
•
•
High output, high efficiency
Narrow spectral width
Sharp radiation directivity (HE8807FL)
Wide radiation directivity (HE8807SG)
High reliability
Package Type
•
HE8807SG: SG1
Package Type
•
HE8807FL: FL
Internal Circuit
1
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
I
F
V
R
Topr
Tstg
Symbol
Ratings
200
3
–20 to +85
–40 to +100
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
HE8807SG
HE8807FL
Symbol
P
O
Pf
*
λp
∆λ
V
F
I
R
Ct
t
r
t
f
Min
10
0.5
800
—
—
—
—
—
—
Typ
20
1.0
880
30
1.7
—
10
20
20
Max
—
—
900
60
2.3
100
—
—
—
Unit
mW
nm
nm
V
µA
pF
ns
ns
Test Conditions
I
F
= 150 mA
I
F
= 20 mA
I
F
= 150 mA
I
F
= 150 mA
I
F
= 150 mA
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.
Rev.0 Oct. 30, 2006 page 1 of 5
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