欢迎访问ic37.com |
会员登录 免费注册
发布采购

HE8404SG_06 参数 Datasheet PDF下载

HE8404SG_06图片预览
型号: HE8404SG_06
PDF下载: 下载PDF文件 查看货源
内容描述: GaAlAs的红外发光二极管 [GaAlAs Infrared Emitting Diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 89 K
品牌: OPNEXT [ OPNEXT. INC. ]
 浏览型号HE8404SG_06的Datasheet PDF文件第1页浏览型号HE8404SG_06的Datasheet PDF文件第3页浏览型号HE8404SG_06的Datasheet PDF文件第4页  
HE8404SG
Typical Characteristic Curves
Optical Output Power vs. Forward Current
60
Optical output power, P
O
(mW)
Forward current, I
F
(mA)
Forward Current vs. Forward Voltage
250
200
150
T
C
= -20°C
100
50
0
25°C
60°C
50
40
30
20
10
0
0
50
100
150
200
250
Forward current, I
F
(mA)
T
C
= -20°C
0°C
25°C
40°C
60°C
0
0.5
1.0
1.5
2.0
2.5
Forward voltage, V
F
(V)
Wavelength Distribution
Relative radiation intensity (%)
Pulse Response
Current pulse
T
C
= 25°C
Relative intensity
100
80
60
40
20
0
T
C
= 25°C
Optical pulse
-40
-20
lp
20
Wavelength,
λ
(nm)
40
20 ns/div
θ
(
30
100
T
C
= 25°C
80
60
40
20
60
90
100
80
60
40
20
0
20
40
60
80
Relative radiation intensity (%)
Angle,
θ
( ° )
0
Rev.0 Oct. 30, 2005 page 2 of 4
Relative radiation intensity (%)
An
gle
,
°)
Radiation Pattern
0