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11KAI-04070-QBA-JD-BA 参数 Datasheet PDF下载

11KAI-04070-QBA-JD-BA图片预览
型号: 11KAI-04070-QBA-JD-BA
PDF下载: 下载PDF文件 查看货源
内容描述: [INTERLINE CCD IMAGE SENSOR]
分类和应用:
文件页数/大小: 50 页 / 1281 K
品牌: ONSEMI [ ONSEMI ]
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KAI−04070  
IMAGING PERFORMANCE  
Table 5. TYPICAL OPERATIONAL CONDITIONS  
(Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.)  
Description  
Light Source  
Operation  
Condition  
Continuous Red, Green and Blue LED Illumination  
Nominal Operating Voltages and Timing  
Notes  
1
1. For monochrome sensor, only green LED used.  
Specifications  
Table 6. PERFORMANCE SPECIFICATIONS  
Temperature  
Tested at  
(5C)  
Sampling  
Plan  
Description  
ALL CONFIGURATIONS  
Symbol  
Min.  
Nom.  
Max.  
Unit  
Dark Field Global Non-Uniformity  
DSNU  
2.0  
5.0  
mVpp  
% rms  
Die  
Die  
27, 40  
27, 40  
Bright Field Global Non-Uniformity  
(Note 1)  
2.0  
Bright Field Global Peak to Peak  
Non-Uniformity (Note 1)  
PRNU  
5.0  
1.0  
15.0  
2.0  
% pp  
% rms  
%
Die  
Die  
27, 40  
27, 40  
Bright Field Center Non-Uniformity  
(Note 1)  
Maximum Photoresponse Non-Linearity  
High Gain (4,000 to 20,000 electrons)  
High Gain (4,000 to 40,000 electrons)  
Low Gain (8,000 to 80,000 electrons)  
Design  
NL_HG1  
NL_HG2  
NL_LG1  
2
3
6
Maximum Gain Difference between  
Outputs (Note 2)  
DG  
10  
%
Design  
Horizontal CCD Charge Capacity  
Vertical CCD Charge Capacity  
H
V
P
90  
ke  
Design  
Design  
Die  
Ne  
Ne  
Ne  
60  
ke  
Photodiode Charge Capacity (Note 3)  
Floating Diffusion Capacity − High Gain  
Floating Diffusion Capacity − Low Gain  
44  
ke  
27, 40  
27, 40  
27, 40  
FNe_HG  
FNe_LG  
HCTE  
40  
ke  
Die  
160  
ke  
Die  
Horizontal CCD Charge Transfer  
Efficiency  
0.999995  
0.999999  
Die  
Vertical CCD Charge Transfer  
Efficiency  
VCTE  
0.999995  
0.999999  
Die  
Photodiode Dark Current  
Vertical CCD Dark Current  
Image Lag  
I
I
7
140  
70  
400  
10  
e/p/s  
e/p/s  
Die  
40  
40  
PD  
Die  
VD  
Lag  
1,000  
e
Design  
Design  
Design  
Design  
Anti-Blooming Factor  
Vertical Smear  
X
AB  
Smr  
−115  
dB  
Read Noise (Note 4)  
High Gain  
Low Gain  
n
e rms  
e−T  
12  
45  
Dynamic Range, Standard (Notes 4, 5)  
DR  
70.5  
82.5  
dB  
dB  
Design  
Design  
Dynamic Range, Extended Linear  
Dynamic Range Mode (XLDR)  
(Notes 4, 5)  
XLDR  
Output Amplifier DC Offset  
V
9.0  
250  
127  
V
MHz  
W
Die  
Die  
27, 40  
27, 40  
ODC  
Output Amplifier Bandwidth (Note 6)  
Output Amplifier Impedance  
f
−3db  
R
Die  
OUT  
Output Amplifier Sensitivity  
High Gain  
Low Gain  
DV/DN  
mV/e  
Design  
33  
8.7  
www.onsemi.com  
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