1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
Symbol
Value
1500
4.0
Unit
W
P
PK
L
DC Power Dissipation @ T = 75°C
P
D
W
L
Measured Zero Lead Length (Note 2)
Derate Above 75°C
54.6
18.3
mW/°C
°C/W
R
q
JL
Thermal Resistance, Junction−to−Lead
DC Power Dissipation (Note 3) @ T = 25°C
P
0.75
6.1
165
W
mW/°C
°C/W
A
D
Derate Above 25°C
R
q
JA
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T = 25°C
I
200
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 in. square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 3.5 V Max. @ I (Note 5) = 100 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
PP
I
F
Uni−Directional TVS
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
cycle
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