1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
Symbol
Value
1500
4.0
Unit
W
P
PK
L
DC Power Dissipation @ T = 75°C
P
D
W
L
Measured Zero Lead Length (Note 2)
Derate Above 75°C
54.6
18.3
mW/°C
°C/W
R
q
JL
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T = 25°C
Derate Above 25°C
P
0.75
6.1
165
W
mW/°C
°C/W
A
D
R
q
JA
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T = 25°C
I
200
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 3.5 V Max. @ I (Note 5) = 100 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
R
I
T
V
F
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
PP
I
F
Uni−Directional TVS
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms
non−repetitive duty cycle
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