0IMD9−002
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
30
−
Typ
−
Max
−
Unit
Reverse Breakdown Voltage
V
(BR)R
V
(I = 10 mA)
R
Total Capacitance
C
pF
mAdc
Vdc
Vdc
Vdc
ns
T
(V = 1.0 V, f = 1.0 MHz)
7.6
10
R
Reverse Leakage
I
R
(V = 25 V)
−
0.5
2.0
0.24
0.5
0.8
5.0
0.32
0.40
R
Forward Voltage
V
F
V
F
V
F
(I = 0.1 mAdc)
−
0.22
0.41
0.52
−
F
Forward Voltage
(I = 30 mAdc)
−
F
Forward Voltage
(I = 100 mAdc)
−
F
Reverse Recovery Time
t
rr
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
−
F
R
R(REC)
Forward Voltage
V
F
V
F
Vdc
Vdc
(I = 1.0 mAdc)
−
0.29
F
Forward Voltage
(I = 10 mAdc)
−
0.35
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2 k
0.1 mF
I
F
t
r
t
p
T
I
F
100 mH
0.1 mF
t
rr
T
10%
90%
DUT
50 W OUTPUT
50 W INPUT
i
= 1 mA
PULSE
GENERATOR
SAMPLING
OSCILLOSCOPE
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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