0AT3G 参数 Datasheet PDF下载

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series

MAXIMUM RATINGS

Rating

Peak Power Dissipation (Note 1) @ T

L

= 25C, Pulse Width = 1 ms

DC Power Dissipation @ T

L

= 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction−to−Lead

DC Power Dissipation (Note 3) @ T

A

= 25C

Derate Above 25C

Thermal Resistance from Junction−to−Ambient

Forward Surge Current (Note 4) @ T

A

= 25C

Operating and Storage Temperature Range

Symbol

P

PK

P

D

R

qJL

P

D

R

qJA

I

FSM

T

J

, T

stg

Value

600

3.0

40

25

0.55

4.4

226

100

−65

to +150

Unit

W

W

mW/C

C/W

W

mW/C

C/W

A

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000

ms,

non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS

(T

A

= 25C unless

otherwise noted, V

F

= 3.5 V Max. @ I

F

(Note 5) = 30 A)

Symbol

I

PP

V

C

V

RWM

I

R

V

BR

I

T

I

F

V

F

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

PP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

T

Test Current

Forward Current

Forward Voltage @ I

F

V

C

V

BR

V

RWM

I

F

I

I

R

V

F

I

T

V

I

PP

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non−repetitive duty cycle.

Uni−Directional TVS

http://onsemi.com

2