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MD56V62160E-10 参数 Datasheet PDF下载

MD56V62160E-10图片预览
型号: MD56V62160E-10
PDF下载: 下载PDF文件 查看货源
内容描述: 4 ,银行】 1048576字】 16位同步动态RAM [4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 34 页 / 510 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
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FEDD56V62160E-01  
OKI Semiconductor  
MD56V62160E  
Mode Set Address Keys  
Single Write  
CAS Latency  
Burst Type  
BT  
Burst Length  
A9  
0
BRSW  
Normal  
A6 A5 A4  
CL  
A3  
0
A2 A1 A0  
BT = 0  
BT = 1  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
1
Sequential  
Interleave  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
4
8
1
2
4
8
1
Single Write  
1
2
3
Reserved  
Reserved  
Reserved  
Reserved  
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Full Page Reserved  
Notes: A7, A8, A10, A11, A12 and A13 should stay “L” during mode set cycle.  
MD56V62160E supports two methods of Power on Sequence.  
POWER ON SEQUENCE 1  
1. With inputs in NOP state, turn on the power supply and start the system clock.  
2. After the V voltage has reached the specified level, pause for 200 µs or more with the input kept in  
CC  
NOP state.  
3. Issue the precharge all bank command.  
4. Apply a CBR auto-refresh eight or more times.  
5. Enter the mode register setting command.  
POWER ON SEQUENCE 2  
1. With inputs in NOP state, turn on the power supply and start the system clock.  
2. After the V voltage has reached the specified level, pause for 200 µs or more with the input kept in  
CC  
NOP state.  
3. Issue the precharge all bank command.  
4. Enter the mode register setting command.  
5. Apply a CBR auto-refresh eight or more times.  
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