¡ Semiconductor
AC Characteristics (1/2)
MD51V64400
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
CAS
Precharge
Access Time from
OE
Output Low Impedance Time from
CAS
CAS
to Data Output Buffer Turn-off Delay Time
OE
to Data Output Buffer Turn-off Delay Time
Transition Time
Refresh Period
RAS
Precharge Time
RAS
Pulse Width
RAS
Pulse Width (Fast Page Mode)
RAS
Hold Time
RAS
Hold Time referenced to
OE
CAS
Precharge Time (Fast Page Mode)
CAS
Pulse Width
CAS
Hold Time
CAS
to
RAS
Precharge Time
RAS
Hold Time from
CAS
Precharge
RAS
to
CAS
Delay Time
RAS
to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address to
RAS
Lead Time
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to
RAS
Symbol
MD51V64400
-50
Min.
Max.
—
—
—
—
50
13
25
30
13
—
13
13
50
64
—
10,000
100,000
MD51V64400
-60
Min.
110
155
40
85
—
—
—
—
—
0
0
0
3
—
40
60
60
15
15
10
15
60
5
35
20
15
0
10
0
10
30
0
0
0
Max.
—
—
—
—
60
15
30
35
15
—
15
15
50
64
—
10,000
100,000
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
8
5
6
4, 5, 6
4, 5
4, 6
4
4
4
7
7
3
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
OEA
t
CLZ
t
OFF
t
OEZ
t
T
t
REF
t
RP
t
RAS
t
RASP
t
RSH
t
ROH
t
CP
t
CAS
t
CSH
t
CRP
t
RHCP
t
RCD
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
90
131
35
76
—
—
—
—
—
0
0
0
3
—
30
50
50
13
13
7
13
50
5
30
17
12
0
7
0
7
25
0
0
0
—
—
—
10,000
—
—
—
37
25
—
—
—
—
—
—
—
—
—
—
—
10,000
—
—
—
45
30
—
—
—
—
—
—
—
—
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