¡ Semiconductor
MSM7705-01/02/03
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
(VDD = +5 V 5%, Ta = –30°C to +85°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
IDD1 Operating mode, No signal
—
14.0
28.0
mA
Power-save mode, PDN = 1,
IDD2
—
2.6
6.0
mA
XSYNC or BCLK OFF
Power Supply Current
Power-down mode, PDN = 0
BCLK OFF
IDD3
—
0.01
0.05
mA
High Level Input Voltage
VIH
VIL
IIH
IIL
—
—
—
—
—
—
—
—
0.2
—
5
VDD
0.8
2.0
0.5
0.4
10
V
V
2.2
0.0
—
Low Level Input Voltage
High Level Input Leakage Current
Low Level Input Leakage Current
Digital Output Low Voltage
Digital Output Leakage Current
Input Capacitance
mA
mA
V
—
VOL Pull-up resistor > 500 W
0.0
—
IO
—
—
mA
pF
CIN
—
—
Transmit Analog Interface Characteristics
(VDD = +5 V 5%, Ta = –30°C to +85°C)
Parameter
Input Resistance
Symbol
Condition
Min.
10
Typ.
—
Max.
—
Unit
MW
kW
pF
RINX AIN1, AIN2, AIN3, AIN4
RLGX GSX1, GSX2, GSX3, GSX4
CLGX with respect to SG
VOGX
Output Load Resistance
Output Load Capacitance
Output Amplitude
20
—
—
—
—
30
–1.7
–20
—
+1.7
+20
V
Offset Voltage
VOSGX
Gain = 1
—
mV
Receive Analog Interface Characteristics
(VDD = +5 V 5%, Ta = –30°C to +85°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
kW
pF
Each output;
Output Load Resistance
RLAO
0.6
—
—
AOUT1 with respect to SG
CLAO AOUT2
—
—
—
50
Output Load Capacitance
Output Amplitude
Offset Voltage
AOUT3 RL = 0.6 kW;
AOUT4 with respect to SG
—
VOAO
–1.7
–100
—
+1.7
+100
V
VOSAO
—
mV
10/20
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