¡ electronic components
KGF1321S
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = Tc = 25°C
—
Unit
V
Min.
—
Max.
10
VGS
V
–6.0
—
0.4
3
IDS
A
Total power dissipation
Channel temperature
Storage temperature
Ptot
W
°C
°C
—
5
Tch
—
150
125
Tstg
—
–45
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Symbol
IGSS
Condition
Unit
mA
mA
mA
A
Min.
Typ.
Max.
0.1
0.5
1.5
—
VGS = –6 V
—
—
—
—
—
—
—
—
—
18
IGDO
IDS(off)
IDSS
VGD = –16 V
VDS = 10 V, VGS = –6 V
VDS = 1.5 V, VGS = 0 V
VDS = 5.8 V, IDSQ = 175 mA
(*1), PIN = 20 dBm
(*1), PIN = 20 dBm
Channel to case
—
2.0
–3.35
31.5
70
Gate bias Q-point
VGSQ
PO
V
–2.45
—
Output power
dBm
%
Drain efficiency
hD
—
Thermal resistance
Rth
°C/W
—
—
*1 Condition: f = 850 MHz, V = 5.8 V, I
= 175 mA
DS
DSQ
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