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KGF1321S 参数 Datasheet PDF下载

KGF1321S图片预览
型号: KGF1321S
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, CERAMIC, 3PFP, 3 PIN]
分类和应用:
文件页数/大小: 7 页 / 103 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
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¡ electronic components  
KGF1321S  
ABSOLUTE MAXIMUM RATINGS  
Item  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDS  
Condition  
Ta = 25°C  
Ta = 25°C  
Ta = 25°C  
Ta = Tc = 25°C  
Unit  
V
Min.  
Max.  
10  
VGS  
V
–6.0  
0.4  
3
IDS  
A
Total power dissipation  
Channel temperature  
Storage temperature  
Ptot  
W
°C  
°C  
5
Tch  
150  
125  
Tstg  
–45  
ELECTRICAL CHARACTERISTICS  
(Ta = 25°C)  
Item  
Gate-source leakage current  
Gate-drain leakage current  
Drain-source leakage current  
Drain current  
Symbol  
IGSS  
Condition  
Unit  
mA  
mA  
mA  
A
Min.  
Typ.  
Max.  
0.1  
0.5  
1.5  
VGS = –6 V  
18  
IGDO  
IDS(off)  
IDSS  
VGD = –16 V  
VDS = 10 V, VGS = –6 V  
VDS = 1.5 V, VGS = 0 V  
VDS = 5.8 V, IDSQ = 175 mA  
(*1), PIN = 20 dBm  
(*1), PIN = 20 dBm  
Channel to case  
2.0  
–3.35  
31.5  
70  
Gate bias Q-point  
VGSQ  
PO  
V
–2.45  
Output power  
dBm  
%
Drain efficiency  
hD  
Thermal resistance  
Rth  
°C/W  
*1 Condition: f = 850 MHz, V = 5.8 V, I  
= 175 mA  
DS  
DSQ  
3/7