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KGF1305T 参数 Datasheet PDF下载

KGF1305T图片预览
型号: KGF1305T
PDF下载: 下载PDF文件 查看货源
内容描述: 功率场效应管(陶瓷封装类型) [Power FET (Ceramic Package Type)]
分类和应用:
文件页数/大小: 6 页 / 69 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
 浏览型号KGF1305T的Datasheet PDF文件第1页浏览型号KGF1305T的Datasheet PDF文件第2页浏览型号KGF1305T的Datasheet PDF文件第4页浏览型号KGF1305T的Datasheet PDF文件第5页浏览型号KGF1305T的Datasheet PDF文件第6页  
¡ electronic components  
KGF1305T  
ABSOLUTE MAXIMUM RATINGS  
Item  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDS  
Condition  
Ta = 21°C  
Ta = 21°C  
Ta = 21°C  
Ta = Tc = 21°C  
Unit  
V
Min.  
Max.  
ꢀ±  
VGS  
V
–6.±  
±.4  
2
IDS  
A
Total power dissipation  
Channel temperature  
Storage temperature  
Ptot  
W
°C  
°C  
3
Tch  
ꢀ1±  
ꢀ21  
Tstg  
–41  
ELECTRICAL CHARACTERISTICS  
(Ta = 21°C)  
Item  
Symbol  
IGSS  
Condition  
Unit  
mA  
mA  
mA  
A
Min.  
Typ.  
Max.  
±.3  
Gate-source leakage current  
Gate-drain leakage current  
Drain-source leakage current  
Drain current  
VGS = –6 V  
IGDO  
IDS(off)  
IDSS  
VGD = –ꢀ6 V  
VDS = ꢀ± V, VGS = –6 V  
VDS = ꢀ.1 V, VGS = ± V  
VDS = 3 V, IDS = 3 mA  
VDS = 3 V, IDS = 4±± mA  
(*ꢀ), PIN = 2± dBm  
(*ꢀ), PIN = 2± dBm  
Channel to case  
3
ꢀ.3  
–4.±  
4±±  
3ꢀ.1  
66  
Gate-source cut-off voltage  
Transconductance  
VGS(off)  
gm  
V
–2.1  
mS  
dBm  
%
Output power  
PO  
3ꢀ.8  
7±  
Drain efficiency  
hD  
Thermal resistance  
Rth  
°C/W  
ꢀ2  
*1 Condition: f = 850 MHz, V = 5.4 V, I  
= 150 mA  
DS  
DSQ  
3/6