¡ electronic components
KGF1305T
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
Condition
Ta = 21°C
Ta = 21°C
Ta = 21°C
Ta = Tc = 21°C
—
Unit
V
Min.
—
Max.
ꢀ±
VGS
V
–6.±
—
±.4
2
IDS
A
Total power dissipation
Channel temperature
Storage temperature
Ptot
W
°C
°C
—
3
Tch
—
ꢀ1±
ꢀ21
Tstg
—
–41
ELECTRICAL CHARACTERISTICS
(Ta = 21°C)
Item
Symbol
IGSS
Condition
Unit
mA
mA
mA
A
Min.
Typ.
Max.
±.3
ꢀ
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
VGS = –6 V
—
—
—
—
IGDO
IDS(off)
IDSS
VGD = –ꢀ6 V
VDS = ꢀ± V, VGS = –6 V
VDS = ꢀ.1 V, VGS = ± V
VDS = 3 V, IDS = 3 mA
VDS = 3 V, IDS = 4±± mA
(*ꢀ), PIN = 2± dBm
(*ꢀ), PIN = 2± dBm
Channel to case
—
—
3
ꢀ.3
–4.±
4±±
3ꢀ.1
66
—
—
Gate-source cut-off voltage
Transconductance
VGS(off)
gm
V
—
–2.1
—
mS
dBm
%
—
Output power
PO
3ꢀ.8
7±
—
Drain efficiency
hD
—
Thermal resistance
Rth
°C/W
—
ꢀ2
—
*1 Condition: f = 850 MHz, V = 5.4 V, I
= 150 mA
DS
DSQ
3/6