¡ electronic components
KGF1256B/1256
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
DS
P
tot
T
ch
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Unit
V
V
mA
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Max.
7
0.4
360
300
150
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Noise figure
Symbol
I
GSS
I
GDO
I
DS(off)
I
DSS
I
D
V
GS(off)
gm
F
Condition
V
GS
= –3 V
V
GD
= –11 V
V
DS
= 3 V, V
GS
= –2 V
V
DS
= 3 V, V
GS
= 0 V
(*1), P
IN
= 5 dBm,
f = 850 MHz
V
DS
= 3 V, I
DS
= 720
mA
V
DS
= 3 V, I
DS
= 25 mA
(*1), f = 850 MHz
(*1), P
IN
=
–20 dBm
Linear gain
G
LIN
(*2), P
IN
=
–20 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
(*1), P
IN
=
5 dBm
Output power
P
O
(*2), P
IN
=
5 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
dBm
dB
Unit
mA
mA
mA
mA
mA
V
mS
dB
Min.
—
—
—
100
—
–1.5
100
—
14.0
—
—
—
—
—
16.0
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
18.0
13.0
10.5
18.0
12.5
10.0
18.0
15.5
11.5
15.0
13.0
10.5
Max.
72
360
720
—
40.0
–0.5
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
*1 Self-bias condition: V
DD
= 5±0.25 V, V
G
= 0 V
*2 Self-bias condition: V
DD
= 3 V, V
G
= 0 V
3/14
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