¡ electronic components
KGF1254B/1254
ABSOLUTE MAXIMUM RATINGS
Item
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
VDS
Condition
Ta = ꢀ5°C
Ta = ꢀ5°C
Ta = ꢀ5°C
Ta = ꢀ5°C
—
Unit
V
Min.
Max.
1±
—
–5.±
—
VGS
V
±.4
IDS
mA
mW
°C
36±
3±±
15±
1ꢀ5
Total power dissipation
Channel temperature
Storage temperature
Ptot
—
Tch
—
Tstg
—
°C
–45
ELECTRICAL CHARACTERISTICS
(Ta = ꢀ5°C)
Max.
7ꢀ
Item
Symbol
IGSS
Condition
Unit
mA
Min.
Typ.
—
Gate-Source leakage current
Gate-Drain leakage current
Drain-Source leakage current
Drain current
VGS = –3 V
—
—
IGDO
VGD = –15 V
mA
—
36±
IDS(off)
IDSS
VDS = 3 V, VGS = –ꢀ.5 V
VDS = 3 V, VGS = ± V
mA
—
—
7ꢀ±
mA
13±
—
—
(*1), PIN = 1± dBm,
f = 85± MHz
Operating current
ID
mA
—
—
8±.±
Gate-Source cut-off voltage
Transconductance
Noise figure
VGS(off)
VDS = 3 V, IDS = 7ꢀ± mA
VDS = 3 V, IDS = 6± mA
(*1), f = 85± MHz
f = 85± MHz
V
–ꢀ.±
1ꢀ5
—
—
–1.±
—
ꢀ.5
—
—
—
—
—
—
—
—
—
—
—
—
g
mS
dB
—
m
F
—
14.±
—
17.±
13.5
11.±
17.±
13.±
1±.±
ꢀꢀ.±
ꢀ±.±
18.±
ꢀ±.±
16.±
15.±
(*1), PIN
–1± dBm
=
=
=
=
f = 1.5 GHz
f = 1.9 GHz
f = 85± MHz
f = 1.5 GHz
f = 1.9 GHz
f = 85± MHz
f = 1.5 GHz
f = 1.9 GHz
f = 85± MHz
f = 1.5 GHz
f = 1.9 GHz
—
Linear gain
GLIN
dB
—
(*ꢀ), PIN
–1± dBm
—
—
ꢀ±.±
—
(*1), PIN
1± dBm
—
Output power
PO
dBm
—
(*ꢀ), PIN
1± dBm
—
—
*1 Self-bias condition: V = 5.2 V, V = 0 V
DD
G
*2 Self-bias condition: V = 3 V, V = 0 V
DD
G
3/14
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