¡ electronic components
KGF1175B/1175
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
DS
P
tot
T
ch
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Unit
V
V
mA
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Max.
7.0
0.4
60
200
150
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Noise figure
Linear gain
Output power
Third-order intercept point
Symbol
I
GSS
I
GDO
I
DS(off)
I
DSS
I
D
V
GS(off)
gm
F
G
LIN
P
O
IP
3
Condition
V
GS
= –3 V
V
GD
= –8 V
V
DS
= 3 V, V
GS
= –2.5 V
V
DS
= 3 V, V
GS
= 0 V
(*1), P
IN
= –20 dBm
V
DS
= 3 V, I
DS
= 120
mA
V
DS
= 3 V, I
DS
= 1.5 mA
(*1)
(*1), P
IN
= –20 dBm
(*1), P
IN
= –3 dBm
(*1), f
2
= 851 MHz
Unit
mA
mA
mA
mA
mA
V
mS
dB
dB
dBm
dBm
Min.
—
—
—
15
—
–2.0
8
—
12.0
3.0
—
Typ.
—
—
—
—
—
—
—
—
—
—
11
Max.
12
60
120
—
2.5
–1.0
—
2.0
—
—
—
*1 Self-bias condition: V
DD
= 5.0 V±0.25 V, V
G
= 0 V, f = 850 MHz
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