¡ electronic components
KGF1146
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
DS
Ptot
Tch
Tstg
Unit
V
V
mA
mW
°C
°C
Min.
—
–3
—
—
—
–45
(Ta = 25°C)
Max.
6
0.4
60
200
150
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Output power
Isolation
Symbol
I
GSS
I
GDO
I
DS(off)
I
DSS
I
D
V
GS(off)
g
m
P
O
ISO
Condition
V
GS
= –3 V
V
GDO
= –6 V
V
DS
= 3 V, V
GS
= –2.0 V
V
DS
= 3 V, V
GS
= 0 V
(*1), P
IN
= –10 dBm
V
DS
= 3 V, I
DS
= 120
mA
V
DS
= 3 V, I
DS
= 2.0 mA
(*1), P
IN
= –10 dBm
(*1), P
IN
= –10 dBm
Unit
mA
mA
mA
mA
mA
V
mS
dBm
dB
Min.
—
—
—
15
—
–1.5
8
1.5
40
Max.
12
60
120
—
2.5
–0.5
—
—
—
*1 Self-bias condition: V
DD
= 5.0
±
0.25 V, V
G
= 0 V, f = 850 MHz
3/7
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