GTD-18464 Rev.2.0
1
Semiconductor
KGA4140
ELECTRICAL CHARACTERISTICS
(Ta= 25°C, V
d
= +3.3V, C(diode)+C(stray) = 0.20 pF)
Parameters
Transimpedance (Differential Output, I
(IN)
<15 µA)
Transimpedance (Single Ended Output, I
(IN)
<15 µA)
Differential Output Swing (I
(IN)
>50 µA)
Single Ended Output Swing (I
(IN)
>50 µA)
Small Signal Bandwidth (–3 dB)
Transimpedance Flatness (< 6 GHz)
Equivalent Input Noise Current (< 7 GHz)
Optical sensitivity
Optical Overload
Input Offset Voltage
Group Delay (<10 GHz)
Output Return Loss (<10 GHz)
Power Consumption
*1)
*1), *2)
Units
Ω
Ω
mVpp
mVpp
GHz
dBΩ
pA/√Hz
dBm
dBm
V
ps
dB
W
Min.
22000
11000
700
350
—
—
—
—
+1
—
—
—
—
Typ.
30000
15000
800
400
7.5
—
10
-18.5
+1.5
+0.80
—
—
0.5
Max.
—
—
900
450
—
±1.5
—
-18
—
—
±20
10
—
*1) Measured at 10
-12
BER with a 2
31
-1 PRBS, assuming responsivity of photo diode of 1.0 A/W and extinction
ratio of transmitter of 10dB.
*2) With external components. Please show “BLOCK DIAGRAM”.
TYPICAL FREQUENCY RESPONSE AND GROUP DELAY
(Ta= 25°C, V
d
= +3.3V, C(diode)+C(stray) = 0.20 pF, Optical Input Power = -18dBm)
90
Transimpedance [dBΩ]
85
80
75
70
65
60
0
5
10
Frequency [GHz]
15
20
50
Group Delay [ps]
0
-50
0
5
10
Frequency [GHz]
15
20
2/8
OKI [ OKI ELECTRONIC COMPONETS ]
