0912LD20
20 Watts, 28 Volts
Pulsed Avionics 960 to 1215 MHz
LDMOS FET
GENERAL DESCRIPTION
The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral
MOSFET capable of providing 20W
pk
of RF power from 960 to 1215 MHz.
The device is nitride passivated and utilizes gold metallization to ensure highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55QT
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
d
)
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS,
V
DS
=0)
Temperatures
Storage Temperature
Operating Case Temperature
60 W
35V
20V
-40 to +150°C
+100°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BV
dss
I
dss
I
gss
V
gs(th)
V
ds(on)
g
FS
θ
JC1
CHARACTERISTICS
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Thermal Resistance
TEST CONDITIONS
V
gs
= 0V, I
d
= 1mA
V
ds
= 28V, V
gs
= 0V
V
gs
= 10V, V
ds
= 0V
V
ds
= 10V, I
d
= 3mA
V
gs
= 10V, I
d
= 250mA
V
ds
= 10V, I
d
= 125mA
MIN
65
50
1
5
0.23
590
0.3
TYP
MAX
UNITS
V
µA
µA
V
V
mA/V
ºC/W
3
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 28V, I
dq
= 80mA
G
PS
Pd
η
d
ψ
NOTES:
Common Source Power Gain
Pulse Droop
Drain Efficiency
Load Mismatch
Pulse width = 32µs, LTDC=2%
F=960/1215 MHz, P
out
= 20W
F = 960 MHz, P
out
= 20W
F = 1090 MHz, P
out
= 20W
14
40
15
0.5
42
5:1
dB
dB
%
1. At rated output power and pulse conditions
2. Pulse Format 1: 32µs, 2% Long Term Duty Factor
Rev. A - May 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at
www.microsemi.com
or contact our factory direct.
MICROSEMI [ MICROSEMI CORPORATION ]
