0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB
150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0150SC-1250M is a
Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT)
capable of
providing 1250 Watts minimum of RF power from 150 to 160 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications
such as VHF Weather Radar and Long Range Tracking Radar.
The device is
the first in a series of High Power Silicon Carbide Transistors from
Microsemi PPG.
CASE OUTLINE
55KT FET
(Common Gate)
See outline drawing
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS
)
Drain Current (Idg)
Temperatures
Storage Temperature
Operating Junction Temperature
250 V
- 1V
35A
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
I
dss1
I
gss
θ
JC1
CHARACTERISTICS
Drain-Source Leakage Current
Gate-Source Leakage Current
Thermal Resistance
TEST CONDITIONS
V
GS
= -15V, V
DG
= 95V
V
GS
= -20V, V
DS
= 0V
Pout=1250W
MIN
TYP
MAX
750
50
0.15
UNITS
µA
µA
ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I
dq(avg)
= 500 mA, Freq = 155 MHz,
G
PG
P
in
η
d
ψ
Po +1dB
Vsg
Dec 2008
Common Gate Power Gain
Input Power
Drain Efficiency
Load Mismatch
Power Output – Higher Drive
Source-Gate Voltage
P
out
= 1250 W, Pulsed
Pulse Width = 300us, DF = 10%
F = 155 MHz, P
out
=1250W
F = 155 MHz, P
out
= 1250W
F = 155 MHz, Pin = 190 W
Set for Idq(avg) = 500 mA
9.0
60
9.5
150
160
10:1
dB
W
%
W
Volts
1400
3.0
10.0
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our
web site at
www.microsemi..com
or contact our factory direct.
MICROSEMI [ MICROSEMI CORPORATION ]
