SMD Type
Transistors
PNP Transistors
2SB1176
■ Typical Characterisitics
PC - Ta
IC - VCE
VCE(sat) - IC
20
−8
−100
−10
IC/IB =20
TC =25˚C
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
I =–120mA
B
−7
–100mA
15
10
5
−6
−5
−4
−3
−2
−1
0
–80mA
–60mA
–40mA
−1
(1)
–30mA
25˚C
TC =100˚C
–20mA
− 0.1
− 0.01
–10mA
–3mA
–25˚C
(2)
80
0
0
40
120
160
0
−2
−4
−6
−8
−10
− 0.01
− 0.1
−1
−10
(
)
(
V
)
Ambient temperature Ta °C
Collector-emitter voltage VCE
( )
Collector current I C A
VBE(sat) - IC
hFE - IC
fT - IC
4
4
−100
−10
10
10
I /IB =20
C
V CE =–2V
VCE=–10V
f=10MHz
TC=25˚C
3
3
10
10
25˚C
TC =100˚C
25˚C
TC =–25˚C
2
2
−1
10
10
–25˚C
100˚C
− 0.1
− 0.01
10
10
1
1
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
(
A
)
Collector current CI
( )
Collector current CI A
( )
Collector current CI A
Cob - VCB
ton,tstg, tf
IC
Safe operation area
-
4
10
100
−100
Non repetitive pulse
TC=25˚C
Pulsed tw =1ms
Duty cycle=1%
IC/IB=10
IE=0
f=1MHz
TC=25˚C
(–IB1=IB2
)
VCC=–50V
TC =25˚C
I
CP
3
10
10
1
−10
−1
t=1ms
I
C
t=10ms
2
10
t=300ms
t
stg
t
on
10
0.1
0.01
t
f
− 0.1
− 0.01
1
− 0.1
−1
−10
−100
0
− 0.8
−1.6
−2.4
−3.2
−1
−10
−100
−1000
(
V
)
Collector current I C (A)
Collector-base voltage VCB
( )
V
Collector-emitter voltage VCE
2
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