SMD Type
Transistors
2SA1682
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
Testconditons
VCB = -200V , IE = 0
Min
Typ
Max
-0.1
-0.1
320
Unit
ìA
IcBO
IEBO
hFE 1
hFE 2
fT
VEB = -4V , IC = 0
ìA
VCE = -6V , IC = -0.1 mA
VCE = -6V , IC = -1 mA
VCE = -30V , IC = -10 mA
100
100
DC current gain
Gain bandwidth product
70
MHz
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
VCE(sat) IC = -10mA , IB = -3mA
VBE(sat) IC = -10mA , IB = -3mA
V(BR)CBO IC = -10ìA , IE = 0
-1.0
-1.0
V
-300
-300
-5
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
Cob
Cre
VCB = -30V , f = 1MHz
VCB = -30V , f = 1MHz
2.4
1.5
1.0
pF
pF
Reverse transfer capacitance
DC current gain ratio
hFE ratio hFE1/ hFE2
hFE Classification
CS
Marking
Rank
4
5
hFE
100 200
160 320
2
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