AUIRFR6215
2000
1600
1200
800
400
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -6.6A
GS
iss
rss
oss
D
V
V
= -120V
= -75V
= -30V
= C + C
,
C
SHORTED
DS
gs
gd
gd
ds
= C
DS
= C + C
V
ds
gd
DS
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
1
10
100
0
20
40
60
80
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
T = 25°C
J
100µs
1ms
T
T
J
= 25°C
= 175°C
C
Single Pulse
10ms
V
GS
= 0V
A
0.1
A
0.2
0.6
1.0
1.4
1.8
1
10
100
1000
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
5
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
