IRFR/U5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp. Coefficient
––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
GateThresholdVoltage
–––
––– 0.065
Ω
V
S
VGS = -10V, ID = -16A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
-2.0 ––– -4.0
ForwardTransconductance
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
––– -25
––– -250
––– 100
––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
IGSS
VGS = -20V
Qg
–––
–––
–––
14
63
13
ID = -16A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
Rise Time
nC
ns
VDS = -44V
29
VGS = -10V, See Fig. 6 and 13
VDD = -28V
–––
–––
–––
–––
66
ID = -16A
td(off)
tf
Turn-Off Delay Time
Fall Time
39
RG = 6.8Ω
63
RD = 1.6Ω, See Fig. 10
Betweenlead,
D
4.5
LD
LS
InternalDrainInductance
InternalSourceInductance
–––
–––
–––
–––
6mm(0.25in.)
nH
pF
G
frompackage
7.5
and center of die contact ꢀ
VGS = 0V
S
Ciss
Coss
Crss
InputCapacitance
––– 1200 –––
OutputCapacitance
–––
–––
520 –––
250 –––
VDS = -25V
ReverseTransferCapacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
-31
––– –––
showing the
A
G
ISM
PulsedSourceCurrent
(Body Diode)
integralreverse
––– ––– -110
––– ––– -1.3
p-n junction diode.
S
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
V
TJ = 25°C, IS = -16A, VGS = 0V
TJ = 25°C, IF = -16A
–––
71 110
ns
nC
Qrr
––– 170 250
di/dt = -100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
lead and center of die contact.
Uses IRF5305 data and test conditions.
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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