IRFR/U3706CPbF
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.6
6.9
8.1
9.0
VGS = 10V, ID = 15A
RDS(on)
Static Drain-to-Source On-Resistance
11 mΩ VGS = 4.5V, ID = 12A
23
2.0
11.5
–––
–––
–––
–––
–––
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VGS(th)
IDSS
Gate Threshold Voltage
V
–––
–––
–––
–––
20
µA
Drain-to-Source Leakage Current
100
200
-200
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 57A
ID = 28A
53
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
35
12
Qgs
Qgd
Qoss
Rg
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
8.0
nC VDS = 10V
VGS = 4.5V
5.5 8.3
16 24
VGS = 0V, VDS = 10V
1.8 –––
6.8 –––
87 –––
17 –––
4.8 –––
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 10V
ID = 28A
ns
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2410 –––
––– 1070 –––
––– 140 –––
Output Capacitance
Reverse Transfer Capacitance
pF
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
220
28
Units
mJ
IAR
Avalanche Current
–––
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
75
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
280
S
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 36A, VGS = 0V
TJ = 125°C, IS = 36A, VGS = 0V
TJ = 25°C, IF = 36A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 45
––– 65
––– 49
68
98
74
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 36A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 78 120
2
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