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IRFR110TRL 参数 Datasheet PDF下载

IRFR110TRL图片预览
型号: IRFR110TRL
PDF下载: 下载PDF文件 查看货源
内容描述: 动态的dv / dt额定值额定重复性雪崩 [Dynamic dV/dt Rating Repetitive Avalanche Rated]
分类和应用: 晶体晶体管开关脉冲
文件页数/大小: 7 页 / 3888 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRFR110, IRFU110, SiHFR110, SiHFU110  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
- 55 to + 150  
260d  
UNIT  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, RG = 25 Ω, IAS = 4.3 A (see fig. 12).  
c. ISD 5.6 A, dI/dt 75 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1” square PCB (FR-4 or G-10 material).  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYP.  
MAX.  
UNIT  
Maximum Junction-to-Ambient  
RthJA  
-
110  
Maximum Junction-to-Ambient  
(PCB Mount)a  
RthJA  
RthJC  
-
-
50  
°C/W  
Maximum Junction-to-Case (Drain)  
5.0  
Note  
a. When mounted on 1” square PCB (FR-4 or G-10 material).  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS  
ΔVDS/TJ  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
Reference to 25 °C, ID = 1 mA  
VDS = VGS, ID = 250 µA  
100  
-
-
-
V
V/°C  
V
V
DS Temperature Coefficient  
-
0.13  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
2.0  
-
-
-
-
-
-
4.0  
100  
25  
250  
0.54  
-
VGS  
VDS = 100 V, VGS = 0 V  
DS = 80 V, VGS = 0 V, TJ = 125 °C  
VGS = 10 V  
ID = 2.6 Ab  
VDS = 50 V, ID = 2.6 A  
=
20 V  
-
nA  
-
-
Zero Gate Voltage Drain Current  
IDSS  
µA  
V
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
-
Ω
1.6  
S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
Qg  
-
-
-
-
-
-
-
-
-
-
180  
80  
15  
-
-
-
VGS = 0 V,  
DS = 25 V,  
f = 1.0 MHz, see fig. 5  
V
pF  
nC  
-
8.3  
2.3  
ID = 5.6 A, VDS = 80 V,  
see fig. 6 and 13b  
Qgs  
Qgd  
td(on)  
tr  
VGS = 10 V  
-
-
3.8  
-
6.9  
16  
15  
9.4  
-
-
-
VDD = 50 V, ID = 5.6 A,  
ns  
RG = 24 Ω, RD = 8.4 Ω, see fig. 10b  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
D
Between lead,  
Internal Drain Inductance  
Internal Source Inductance  
LD  
LS  
-
-
4.5  
7.5  
-
-
6 mm (0.25") from  
package and center of  
die contact  
nH  
G
S
www.kersemi.com  
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