IRFR/U5410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient -0.12 V/°C Reference to 25°C, ID = -1.0mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.205
W
V
S
VGS = -10V, ID = -7.8A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -7.8A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 -4.0
3.2
Forward Transconductance
-25
-250
100
-100
58
8.3
32
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -8.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13
15
58
45
46
VDD = 50V
RiseTime
ID = -8.4A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 9.1W
RD =6.2W, See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
from package
7.5
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
760
260
170
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-13
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-52
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.6
130 190
650 970
V
TJ = 25°C, IS = -7.8A, VGS = 0V
ns
TJ = 25°C, IF = -8.4A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width £ 300µs; duty cycle £ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 6.4mH
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
RG = 25W, IAS = -7.8A. (See Figure 12)
ISD £ -7.8A, di/dt £ 200A/µs, VDD £ V(BR)DSS
TJ £ 150°C
Uses IRF9530N data and test conditions.
,
www.kersemi.com
2 / 10
KERSEMI [ Kersemi Electronic Co., Ltd. ]
