IRFR/U1010Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
5.8
–––
–––
–––
–––
–––
7.5
4.0
–––
20
VGS = 10V, ID = 42A
VDS = VGS, ID = 100µA
Forward Transconductance
31
S
V
V
V
DS = 25V, ID = 42A
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
DS = 55V, VGS = 0V
250
200
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
ID = 42A
––– -200
Qg
Qgs
Qgd
td(on)
tr
63
17
23
17
76
42
48
4.5
95
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
nC VDS = 44V
VGS = 10V
VDD = 28V
Rise Time
ID = 42A
td(off)
tf
Turn-Off Delay Time
ns RG = 7.6 Ω
VGS = 10V
Fall Time
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 2840 –––
VGS = 0V
VDS = 25V
Coss
Output Capacitance
–––
–––
470
250
–––
–––
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
––– 1630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
360
560
–––
–––
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
360
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
24
1.3
36
30
V
T = 25°C, I = 42A, V = 0V
J S GS
SD
t
ns T = 25°C, I = 42A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
20
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
