IRFIBC20G, SiHFIBC20G
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
65
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
-
-
°C/W
4.1
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
600
-
-
V
V/°C
V
-
0.88
-
2.0
-
-
-
-
-
-
4.0
100
100
500
4.4
-
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0 Ab
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
1.4
S
Input Capacitance
Ciss
Coss
Crss
C
-
-
-
-
-
-
-
-
-
-
-
350
48
8.6
12
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
-
pF
nC
ns
-
-
f = 1.0 MHz
Qg
18
3.0
8.9
-
ID = 2.0 A, VDS = 360 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
-
10
23
30
25
VDD = 300 V, ID = 2.0 A,
-
R
G = 18Ω, RD= 150 Ω,
see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
1.7
6.8
D
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
-
-
-
-
1.6
580
1.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
290
0.65
ns
µC
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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