IRF9510, SiHF9510
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
3.5
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
- 100
-
-
-
V
V/°C
V
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
-
- 0.091
- 2.0
-
-
-
-
-
-
- 4.0
100
VGS
=
20 V
-
nA
VDS = - 100 V, VGS = 0 V
-
-
- 100
- 500
1.2
Zero Gate Voltage Drain Current
IDSS
µA
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
ID = - 2.4 Ab
-
Ω
VDS = - 50 V, ID = - 2.4 Ab
1.0
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
200
94
18
-
-
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
-
pF
nC
-
8.7
2.2
4.1
-
ID = - 4.0 A, VDS = - 80 V,
Qgs
Qgd
td(on)
tr
VGS = - 10 V
-
see fig. 6 and 13b
-
10
27
15
17
-
VDD = - 50 V, ID = - 4.0 A,
ns
R
G = 24 Ω, RD = 11 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
- 4.0
- 16
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb
-
-
-
-
- 5.5
160
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
82
ns
µC
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/µsb
Qrr
ton
0.15
0.30
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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