Bulletin PD -2.339 rev. A 11/00
HFA25TB60
TM
HEXFRED
Ultrafast, Soft Recovery Diode
BASE
CATHODE
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Features
4
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
Qrr (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
• Very Low Qrr
2
• Specified at Operating Conditions
Benefits
1
3
CATHODE
ANODE
2
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
di(rec)M/dt (typ.) = 250A/µs
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
TO-220AC
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
600
25
V
IF @ TC = 100°C
IFSM
IFRM
225
100
125
50
A
PD @ TC = 25°C
C
PD @ TC = 100°C
TJ
TSTG
W
-55 to +150
Storage Temperature Range
* 125°C
1
INTERFET [ INTERFET CORPORATION ]
