C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
Absolute maximum ratings at T = 25¡C.
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 15 V
10 mA
300 mW
2.4 mW/°C
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
VCR2N
NJ72
VCR4N
NJ16
Process
Test Conditions
I = – 1 µA, V = ØV
At 25°C free air temperature:
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 15
– 15
V
nA
V
(BR)GSS
G
DS
I
– 5
– 0.2
– 7
V
= – 15V, V = ØV
GSS
GS DS
Gate Source Cutoff Voltage
V
– 1
20
– 3.5
– 3.5
I = – 1 µA, V = 10V
D DS
GS(OFF)
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
r
60
7.5
7.5
200
600
3
Ω
V
= ØV, I = ØA
f = 1 kHz
ds(on)
GS D
C
pF
pF
V
= 10V, I = ØA
f = 1 MHz
f = 1 MHz
dg
DG S
Source Gate Capacitance
C
3
V
= 10V, I = ØA
sg
DG D
VCR7N
NJ01
Process
At 25°C free air temperature:
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 15
V
nA
V
I = – 1 µA, V = ØV
G DS
(BR)GSS
I
– 0.1
– 5
V
= – 15V, V = ØV
GSS
GS DS
Gate Source Cutoff Voltage
V
– 2.5
I = – 1 µA, V = 10V
D DS
GS(OFF)
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
r
4000
8000
1.5
Ω
V
= ØV, I = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
ds(on)
GS D
C
pF
pF
V
= 10V, I = ØA
dg
DG S
Source Gate Capacitance
C
1.5
V
= 10V, I = ØA
sg
DG D
VCR2N & VCR4N
VCR7N
TOÐ18 Package
See Section G for Outline Dimensions
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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(972) 487-1287 FAX (972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]