01/99
B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Wideband Differential
Amplifiers
A
Continuous Forward Gate Current
Total Device Power Dissipation
Power Derating
50 mA
500 mW
4 mW°C
Storage Temperature Range
–65°C to + 200°C
At 25°C free air temperature:
2N5911
2N5912
Process NJ30L or NJ36D
Test Conditions
I = – 1 µA, V = ØV
Static Electrical Characteristics
Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 25
– 25
V
– 100 pA
– 250 nA
– 100 pA
– 100 nA
(BR)GSS
G
DS
– 100
– 250
– 100
– 100
– 5
V
= – 15V, V = ØV
DS
GS
Gate Reverse Current
Gate Operating Current
I
GSS
V
= – 15V, V = ØV
DS
T = 150°C
A
GS
V
= 10V, I = 5 mA
D
DG
I
G
V
= 10V, I = 5 mA
D
T = 125°C
A
DG
Gate Source Cutoff Voltage
Gate Source Voltage
V
– 1
– 1
– 5
V
V
V = 10V, I = 1 nA
DS D
GS(OFF)
V
– 0.3 – 4 – 0.3 – 4
40 40
V
= 10V, I = 5 mA
GS
DS D
Drain Saturation Current (Pulsed)
I
7
7
mA
V
= 10V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
5000 10000 5000 10000 µS
5000 10000 5000 10000 µS
V
= 10V, I = 5 mA
D
f = 1 kHz
Common Source
Forward Transconductance
DG
g
g
fs
V
= 10V, I = 5 mA
D
f = 100 MHz
f = 1 kHz
DG
100
150
5
100
150
5
µS
µS
pF
V
= 10V, I = 5 mA
D
Common Source
Output Conductance
DG
os
V
= 10V, I = 5 mA
D
f = 100 MHz
f = 1 MHz
DG
Common Source Input Capacitance
C
V
= 10V, I = 5 mA
iss
DG D
Common Source
Reverse Transfer Capacitance
C
1.2
20
1
1.2
pF
V
= 10V, I = 5 mA
f = 1 MHz
f = 10 kHz
f = 10 kHz
rss
DG D
Equivalent Short Circuit Input Noise Voltage e¯
20 nV/√Hz
V
= 10V, I = 5 mA
N
DG D
V
= 10V, I = 5 mA
D
DG
Noise Figure
NF
1
dB
nA
R = 100 KΩ
G
Differential Gate Current
I
– I
20
1
20
1
V
= 10V, I = 5 mA
T = 125°C
A
G1
G2
DG
D
Saturation Drain Current Ratio
Differential Gate Source Voltage
I
/ I
0.95
0.95
0.85
V
= 20V, V = ØV
GS
DSS1 DSS2
| V – V
DG
|
GS2
10
15
mV
mV
V
= 10V, I = 5 mA
D
GS1
DG
T = 25°C,
A
20
40
V
= 10V, I = 5 mA
DG D
T = 125°C
B
∆V – V
GS1 GS2
Gate Source Voltage
Differential Drift
∆T
T = – 55°C,
A
20
1
40
1
mV
V
= 10V, I = 5 mA
D
DG
T = 25°C
B
Transconductance Ratio
g
/ g
0.9
V
= 10V, I = 5 mA
f = 1 kHz
fs1 fs2
DG D
SOIC-8 Package
See Section G for Outline Dimensions
TOÐ78 Package
See Section G for Outline Dimensions
Surface Mount
SMP5911, SMP5912
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
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