01/99
B-21
2N5460, 2N5461, 2N5462
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at 25¡C
¥ Audio Amplifiers
¥ General Purpose
Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
40 V
– 10 mA
310 mW
2.8 mW/°C
2N5460
2N5461
2N5462
Process PJ32
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
V
40
40
40
V
nA
µA
V
I = 10µA, V = ØV
G DS
(BR)GSS
5
1
5
1
5
1
9
V
= 20V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
V
= 20V, V = ØV
DS
T = 100°C
A
GS
Gate Source Cutoff Voltage
V
0.75
0.8
6
1
7.5
1.8
V = – 15V, I = – 1 µA
DS D
GS(OFF)
4.5
V
V
= – 15V, I = – 100 µA
D
DS
Gate Source Voltage
V
0.8
– 2
4.5
– 9
V
V
= – 15V, I = – 200 µA
DS D
GS
1.5
– 4
6
V
V
= – 15V, I = – 400 µA
D
DS
Drain Saturation Current (Pulsed)
I
– 1
1
– 5
– 16 mA
V
= – 15V, V = ØV
DSS
DS GS
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
2
4
0.8
5
0.4
6
kΩ
mS
µS
V
= ØV, I = Ø A
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
ds(on)
GS D
Common Source Forward Transadmittance
Common Source Output Admittance
Common Source Input Capacitance
| Y |
fs
1.5
2
V
= – 15V, V = Ø V
GS
DS
| Y
os
|
75
7
75
7
75
7
V
= – 15V, V = Ø V
GS
DS
C
pF
V
= – 15V, V = ØV
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
2
2
2
pF
dB
V
= – 15V, V = ØV
f = 1 MHz
rss
DS GS
Equivalent Short Circuit
Input Noise Voltage
f = 100 Hz,
BW = 1 Hz
e¯
2.5
115
2.5
115
2.5
115
V
= – 15V, V = ØV
GS
N
DS
V
= – 15V, V = ØV,
GS
DS
nV/√Hz
Noise Figure
NF
f = 100 Hz
R = 1MΩ
G
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMP5460, SMP5461, SMP5462
Pin Configuration
1 Drain, 2 Source, 3 Gate
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