B-44
01/99
IFN5114, IFN5115, IFN5116
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Analog Switches
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
50 mA
500 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
4 mW/°C
Storage Temperature Range
– 65°C to 200°C
IFN5114
IFN5115
IFN5116
Process PJ99
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
V
30
5
30
3
30
1
V
nA
µA
V
I = – 1mA, V = ØV
G DS
(BR)GSS
2
2
10
6
2
10
4
V
= 20V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
10
10
– 1
V
= 20V, V = ØV
DS
T = 150°C
A
GS
Gate Source Cutoff Voltage
Gate Source Forward Voltage
V
V = – 15V, I = – 1 nA
DS G
GS(OFF)
V
– 1
– 1
V
V
= ØV, I = – 1 mA
GS(F)
DS G
– 30 – 90
mA
V
= – 15V, V = 18V
GS
DS
Drain Saturation Current (Pulsed)
Drain Cutoff Current
I
DSS
– 15 – 60 – 5 – 25 mA
V
= – 15V, V = 15V
GS
DS
– 2
– 2
– 2
nA
µA
V
V
= – 15V, V = 12V
GS
DS
I
D(OFF)
– 10
– 1.3
– 10
– 10
V
= – 15V, V = 7V
GS
T = 150°C
A
DS
V
= ØV, I = – 15 mA
D
GS
Drain Source ON Voltage
V
– 0.8
100
V
V
= ØV, I = – 7 mA
GS D
DS(ON)
– 0.6
150
V
V
= ØV, I = – 3 mA
D
GS
Static Drain Source ON Resistance
r
75
Ω
V
= ØV, I = – 1 mA
DS(ON)
GS D
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
75
25
7
100
25
150
27
Ω
V
= ØV, I = ØA
D
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
ds(on)
GS
Common Source Input Capacitance
C
pF
pF
pF
pF
V =– 15V, V = ØV
DS GS
iss
V
= – 10V, V = 12V
GS
DS
Common Source Reverse
Transfer Capacitance
C
7
V = – 10V, V = 7 V
DS GS
rss
7
V
= – 10V, V = 5V
GS
DS
Switching Characteristics
Turn ON Delay Time
Rise Time
IFN5114 IFN5115 IFN5116
– 10 – 6 – 6
20 12
V
V
V
DD
t
t
t
t
6
10
6
10
20
8
25
35
20
60
ns
ns
ns
ns
d(on)
V
8
GG
r
R
130
100
910
220
– 7
2000
390
– 3
Ω
L
Turn OFF Delay Time
Fall Time
d(off)
f
R
Ω
G
15
30
I
– 15
mA
D(ON)
TOÐ18 Package
See Section G for Outline Dimensions
Surface Mount
SMP5114, SMP5115, SMP5116
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
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INTERFET [ INTERFET CORPORATION ]