B-18
01/99
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Analog Switches
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 50 V
50 mA
500 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
4 mW/°C
Storage Temperature Range
– 65°C to + 200°C
At 25°C free air temperature:
Static Electrical Characteristics
2N5020
2N5021
Process PJ32
Test Conditions
I = 1µA, V = ØV
Min Max Min Max Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
25
25
V
nA
V
(BR)GDO
G
DS
I
1
1
V
= 15V, V = ØV
GSS
GS
DS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
0.3 1.5 0.5 2.5
V
= – 15V, I = 1 nA
GS(OFF)
DS
D
I
– 0.3 – 1.2 – 1 – 3.5 mA
V
= – 15V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
g
1
3.5 1.5
6
mS
V
= – 15V, V = ØV
fs
DS
GS
Common Source Output Conductance
Common Source Input Capacitance
20
25
20
25
µS
pF
V
= – 15V, V = ØV
os
DS
GS
C
V
= – 15V, V = ØV
f = 1 MHz
f = 1 MHz
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
7
7
pF
V
= – 15V, V = ØV
rss
DS
GS
TOÐ18 Package
Dimensions in Inches (mm)
Surface Mount
SMP5020, SMP5021
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
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