F-30
01/99
PJ99 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ Analog Switch
G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
G
Devices in this Databook based on the PJ99 Process.
S-D
Datasheet
2N3993, 2N3993A
2N3994, 2N3994A
2N5114, 2N5115
2N5116
Datasheet
IFP44
J174, J175
J176, J177
P1086, P1087
VCR3P
Die Size = 0.021" X 0.021"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
2SJ44
IFN5114, IFN5115
IFN5116
At 25°C free air temperature:
Static Electrical Characteristics
PJ99 Process
Min
Typ
Max
Unit
Test Conditions
I = 1 µA, V = ØV
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
30
40
V
nA
mA
V
(BR)GSS
G
DS
I
0.5
1
– 60
8
V
= 20V, V = ØV
GSS
GS
DS
I
– 5
1
V
= – 15V, V = ØV
DSS
DS
GS
V
V
= – 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Turn On Delay Time
Rise Time
r
75
15
18
4.5
8
Ω
mS
pF
pF
I = 1 mA, V = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
D
GS
ds(on)
g
V
= – 15V, V = ØV
DS
GS
fs
C
V
= 15V, V = ØV
iss
DS
GS
C
V
= ØV, V = 10V
iss
DS
GS
e¯
nV/√HZ V = – 10V, V = ØV
DS GS
N
t
5
ns
ns
ns
ns
d(on)
V
= – 10V, I
= – 15 mA
= ØV
GS(ON)
DD
D(ON)
t
r
10
6
R = 580Ω, V
L
Turn Off Delay Time
Fall Time
t
d(off)
V
= 12V
GS(OFF)
t
f
5
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