F-26
01/99
NJ72 Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
G
Devices in this Databook based on the NJ72 Process.
Datasheet
IFN5564, IFN5565
IFN5566
J308, J309
J308, J309
J310
Datasheet
U308, U309
U430, U431
VCR2N
S-D
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
NJ72 Process
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 25
– 40
– 10
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
90
V
= – 15V, V = ØV
GSS
GS
DS
I
5
V
= 15V, V = ØV
DSS
DS
GS
V
– 1
– 5.5
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
g
22
40
mS
Ω
V
= 15V, V = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
DS
GS
fs
r
I = 1 mA, V = ØV
D GS
ds(on)
C
6.5
2.5
pF
pF
V
= ØV, V = – 10V
iss
DS
GS
Feedback Capacitance
C
V
= ØV, V = – 10V
DS
GS
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