F-38
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
G
S-D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
Devices in this Databook based on the NJ450L Process.
S-D
Datasheet
2N6550
IF4500
IF4501
IFN860
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ450L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 25
– 25
– 50
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
V
= – 15V, V = ØV
GSS
GS
DS
I
5
V
= 15V, V = ØV
DSS
DS
GS
V
– 0.1
– 4
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
g
100
35
mS
pF
pF
V
= 15V, V = ØV
f = 1 kHz
DS
GS
fs
C
V
= ØV, V = – 10V
f = 1 MHz
f = 1 MHz
f = 1 kHz
iss
DS
GS
Feedback Capacitance
C
10
V
= ØV, V = – 10V
DS
GS
rss
Equivalent Noise Voltage
e¯
0.9
nV/√HZ V = 4V, I = 5 mA
DG D
N
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