F-22
01/99
NJ36D Process
Silicon Junction Field-Effect Transistor
¥ Monolithic Dual Construction
¥ High Frequency Amplifier
¥ Low-Noise Amplifier
G
S
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
D
S
D
Devices in this Databook based on the NJ36D Process.
G
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
Die Size = 0.026" X 0.026"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ36D Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 25
– 35
0.05
V
nA
mA
V
I = – 1 mA, V = ØV
(BR)GSS
G
DS
I
0.1
40
V
= – 15V, V = ØV
GSS
GS
DS
I
1
V
= 15V, V = ØV
DSS
DS
GS
V
– 0.5
– 8
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
r
90
250
Ω
mS
pF
pF
I = Ø mA, V = ØV
f = 1 kHz
D
GS
ds(on)
g
8.5
5.5
1.5
5
V
= 15V, V = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
DS
GS
fs
C
7.0
3
V
= 10V, V = ØV
iss
DS
GS
Feedback Capacitance
C
V
= 10V, V = ØV
DS
GS
rss
Equivalent Noise Voltage
Differential Gate Source Voltage
e¯
nV/√HZ V = 15V, I = 5 mA
DS
D
N
V
– V
5
20
100
mV
V
= 15V, I = 5 mA
GS1
GS2
DG
D
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