F-14
01/99
NJ30 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
G
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
This process available for customer-specified
applications.
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
NJ30 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 30
– 40
– 10
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
22
V
= – 20V, V = ØV
GSS
GS
DS
I
2
V
= 15V, V = ØV
DSS
DS
GS
V
– 1
– 5
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
g
6
4.3
1
mS
pF
pF
V
= 15V, V = ØV
f = 1 kHz
DS
GS
fs
C
5
V
= 15V, V = ØV
f = 1 MHz
f = 1 MHz
f = 1 kHz
iss
DS
GS
Feedback Capacitance
Equivalent Noise Voltage
C
1.5
V
= 15V, V = ØV
DS
GS
rss
e¯
4
nV/√HZ V = 10V, I = 5 mA
DS D
N
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INTERFET [ INTERFET CORPORATION ]