F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
D
¥ Low Gate Leakage Current
¥ High Input Impedance
¥ Low-Noise
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
Device in this Databook based on the NJ1800DL Process.
S
Datasheet
IF1801
Die Size = 0.052" X 0.052"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ1800DL Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
I = – 1 µA, V = ØV
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 15
– 25
– 30
V
pA
mA
V
(BR)GSS
G
DS
I
– 100
800
V
= – 10V, V = ØV
GSS
GS
DS
I
50
V
= 10V, V = ØV
DSS
DS
GS
V
– 0.1
– 4
V
= 10V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
g
350
160
50
mS
pF
pF
V
= 10V, V = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
DS
GS
fs
C
I = 1 mA, V = ØV
D GS
iss
Feedback Capacitance
C
V
= 10V, V = ØV
DS
GS
rss
Equivalent Noise Voltage
e¯
0.7
nV/√HZ V = 4V, I = 5 mA
DG D
N
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