F-6
01/99
NJ16 Process
Silicon Junction Field-Effect Transistor
¥ Low Current Switch
¥ General Purpose Amplifier
¥ High Breakdown Voltage
G
Absolute maximum ratings at TA = 25¡C
S-D
G
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
Devices in this Databook based on the NJ16 Process.
Datasheet
Datasheet
2SK17, 2SK40
2SK59, 2SK105
IFN17, IFN40
IFN59, IFN105
J201, J202
J203, J204
J230, J231
J232
Datasheet
J504, J505
J506, J507
J508, J509
J510, J511
J553, J554
J555, J556
J557
2N3954, 2N3955
2N3956
Die Size = 0.017" X 0.017"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
2N3957, 2N3958
2N4220, 2N4220A
2N4221, 2N4221A
2N4338, 2N4339
2N4340, 2N4341
2N4867, 2N4867A
2N4868, 2N4868A
2N4869, 2N4869A
U553, U554
U555, U556
U557
J500, J501
J502, J503
VCR4N
At 25°C free air temperature:
Static Electrical Characteristics
NJ16 Process
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 50
– 60
– 10
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
9
V
= – 30V, V = ØV
GSS
GS
DS
I
0.2
V
= 15V, V = ØV
DSS
DS
GS
V
– 0.8
– 5.5
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
g
2.2
3.5
1.2
6
mS
pF
pF
V
= 15V, V = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
DS
GS
fs
C
V
= 15V, V = ØV
iss
DS
GS
Feedback Capacitance
Equivalent Noise Voltage
C
V
= 15V, V = ØV
DS
GS
rss
e¯
nV/√HZ V = 10V, I = 5 mA
DS D
N
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