F-32
01/99
NJ132 Process
Silicon Junction Field-Effect Transistor
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G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
G
Devices in this Databook based on the NJ132 Process.
S-D
Datasheet
2N4391, 2N4392
2N4393
2N4856, 2N4857
2N4858, 2N4859
2N4860, 2N4861
2N4856A, 2N4857A
2N4858A, 2N4859A
Datasheet
2SK113
IFN113
2N4860A, 2N4861A
J111, J112
J113
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
NJ132 Process
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 30
– 45
– 10
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
150
V
= – 20V, V = ØV
GSS
GS
DS
I
10
V
= 20V, V = ØV
DSS
DS
GS
V
– 0.5
– 7
V
= 20V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
r
25
12
2.5
6
Ω
pF
pF
ns
ns
ns
I = 1 mA, V = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
D
GSS
ds(on)
C
V
= 20V, V = ØV
iss
DS
GS
C
V
= ØV, V = – 10V
iss
DS
GS
t
t
t
V
= – 10V, I = 10 mA
d(on)
DD
D
5
R = 10V, V
= ØV
L
GS(ON)
r
V
= – 6V
Turn Off Delay Time
50
GS(OFF)
d(off)
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